In this study the growth kinetics of Ni silicide ( $Ni_2Si$ and NiSi ) in Ni/α-Si interface has been investigated mainly by Transmission Electron Microscopy (TEM). Ni (99.99%) and Si (99.999%) were deposited by DC and RF magnetron sputtering on thermally oxidized (100)Si substrate, respectively. In order to minimize the contamination at Ni/α-Si interface, Ni layer and α-Si layer were deposited alternativlely in the same chamber.
The film were annealed in the vacuum furnace to prevent oxidation. $Ni_2Si$ and NiSi phases were formed at the annealing temperatures of 240 - 330℃ and 450℃, respectively. Annealing time was varied from 0.5hr to 16hr.
$Ni_2Si$ growth was investigated in Ni/c-Si and Ni/α-Si interfaces. The growth rate of $Ni_2Si$ and diffusion of Ni in the silicide were faster in Ni/α-Si than Ni/c-Si. And silicide formation morphology was changed from facet to columnar. In Ni/α-Si, growth kinetics of $Ni_2Si$ was investigated by TEM. It was found by TEM analysis that the growth thickness increased linearly with time which meaned that the silicide formation was not diffusion controlled process. The activation energy for the linear growth was 0.28eV.
NiSi growth kinetics in Ni/α-Si was investigated by XRD. This data also showed that NiSi was grown linearly.