서지주요정보
Ni/α-Si 계면에서 Ni 실리사이드 형성에 관한 연구 = A study of Ni silicide formation in Ni/α-Si system
서명 / 저자 Ni/α-Si 계면에서 Ni 실리사이드 형성에 관한 연구 = A study of Ni silicide formation in Ni/α-Si system / 김홍성.
저자명 김홍성 ; Kim, Hong-Sung
발행사항 [대전 : 한국과학기술원, 1996].
Online Access 원문보기 원문인쇄

소장정보

등록번호

8006504

소장위치/청구기호

학술문화관(문화관) 보존서고

MMS 96012

SMS전송

도서상태

이용가능

대출가능

반납예정일

초록정보

In this study the growth kinetics of Ni silicide ( $Ni_2Si$ and NiSi ) in Ni/α-Si interface has been investigated mainly by Transmission Electron Microscopy (TEM). Ni (99.99%) and Si (99.999%) were deposited by DC and RF magnetron sputtering on thermally oxidized (100)Si substrate, respectively. In order to minimize the contamination at Ni/α-Si interface, Ni layer and α-Si layer were deposited alternativlely in the same chamber. The film were annealed in the vacuum furnace to prevent oxidation. $Ni_2Si$ and NiSi phases were formed at the annealing temperatures of 240 - 330℃ and 450℃, respectively. Annealing time was varied from 0.5hr to 16hr. $Ni_2Si$ growth was investigated in Ni/c-Si and Ni/α-Si interfaces. The growth rate of $Ni_2Si$ and diffusion of Ni in the silicide were faster in Ni/α-Si than Ni/c-Si. And silicide formation morphology was changed from facet to columnar. In Ni/α-Si, growth kinetics of $Ni_2Si$ was investigated by TEM. It was found by TEM analysis that the growth thickness increased linearly with time which meaned that the silicide formation was not diffusion controlled process. The activation energy for the linear growth was 0.28eV. NiSi growth kinetics in Ni/α-Si was investigated by XRD. This data also showed that NiSi was grown linearly.

서지기타정보

서지기타정보
청구기호 {MMS 96012
형태사항 [iii], 54 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Hong-Sung Kim
지도교수의 한글표기 : 이재영
지도교수의 영문표기 : Jai-Young Lee
학위논문 학위논문(석사) - 한국과학기술원 : 재료공학과,
서지주기 참고문헌 : p. 52-54
주제 활성화 에너지
실리사이드
성장기구
$Ni_2Si$
Growth Kinetics Mechanism
Activation Energy
Silicide
QR CODE qr code