서지주요정보
기판접착을 이용한 몸체접지형SOI nMOSFET에 대한 연구 = Study on grounded body SOI n-channel MOSFET by wafer bonding
서명 / 저자 기판접착을 이용한 몸체접지형SOI nMOSFET에 대한 연구 = Study on grounded body SOI n-channel MOSFET by wafer bonding / 강원구.
저자명 강원구 ; Kang, Won-Gu
발행사항 [대전 : 한국과학기술원, 1996].
Online Access 원문보기 원문인쇄

소장정보

등록번호

8006348

소장위치/청구기호

학술문화관(문화관) 보존서고

DEE 96004

휴대폰 전송

도서상태

이용가능

대출가능

반납예정일

초록정보

A grounded body SOI (GBSOI) MOSFET has been proposed, fabricated and characterized to verify the applicability for high speed and low power VLSI circuits including digital and analog circuits. The device that had a body tied to a grounded $p^+$ polysilicon layer buried under the channel region was realized by a wafer bonding and polishing technology. The GBSOI device with a buried electrode eliminated body floating effects such as drain current kink and single transistor latch, and it increased drain breakdown voltage. An occurrence of drain current kink depending on the buried electrode resistance was monitored by connecting various external resistors to the $p^+$ polysilicon of the buried electrode. As a result, the kink effect was not observed for a buried electrode resistance below 100 kΩ. A significant damage in the gate oxide/silicon interface was not observed during the wafer bonding and polishing steps, which was confirmed by the measurement of interface trap density through the charge pumping and subthreshold current methods. The proposed structure is proved to greatly improve the performances of SOI MOSFET by eliminating parasitic bipolar actions originated from the body floating.

서지기타정보

서지기타정보
청구기호 {DEE 96004
형태사항 viii, 93 p. : 삽도 ; 19 cm
언어 한국어
일반주기 저자명의 영문표기 : Won-Gu Kang
지도교수의 한글표기 : 이귀로
지도교수의 영문표기 : Kwy-Ro Lee
수록 잡지명 : "Grounded body SOI (GBSOI) nMOSFET by Wafer Bonding". IEEE Electron Device Letters. IEEE Electron Devices Society, vol. 16, no. 1, pp. 2-4
학위논문 학위논문(박사) - 한국과학기술원 : 전기및전자공학과,
서지주기 참고문헌 : p. 83-89
주제 에스오아이
기팝접착
모스소자
몸체접지
SOI
Wafer Bonding
MOSFET
Grounded Body
QR CODE qr code