In this paper, we have proposed a new structure of polysilicon thin film transistor(Poly-Si TFT) on glass substrate for liquid crystal display. The active island of the proposed TFT formed by polishing of thick (5000Å) recrystallized amorphous-Si(a-Si) is buried in glass substrate. The proposed TFTs exhibited a higher field-effect mobility about two times, a lower inverse subthreshold slope and a lower leakage current about six times in comparison with conventional TFT of which the active island is in glass substrate. Moreover the buried island reduces electric field concentration at the active island edge, consequently, improves gate voltage swing and reduces thickness of gate oxide about 1.6 times
