Line Unified GaAs FET is fabricated. It use 1μm FET photo lithography process. It consist of the source and common-ground gate as the coplanar waveguide input and drain as the micro stripe line output port. So its low input impedance($\frac{1}{gm}$) is actively matched characteristic impedance $Z_o$. Power Combiner and Up-Converter are fabricated by using LUFET.
The laser lithography system for making mask is developed. The minimum line width for fine pattern is about 2μm. FET using Mask by laser lithography has fabricated.
