A new single crystalline silicon AM-LCD is proposed. The proposed AM-LCD was fabricated with a conventional bulk MOSFET fabrication process followed by the two-step electrochemical etching of silicon substrate in a light path. The light path is defined accurately by the n-diffusion layer and the switching device is fabricated in p-region which is surrounded by the n-diffusion layer.
The proposed c-Si AM-LCD has many advantages. The switching devices have the good characteristics and the peripheral driving circuits can be intergrated. The spacer in liquid crystal is not needed because the thickness of n-layer can be made to several micrometers.
The fabricated switching devices exhibit on electron mobility and on/off current ratio of about 500㎠/V·s and 8 decades, respectively and a pixel pitch and aperture ratio of 140㎛×140㎛ and 47% were achieved.
