서지주요정보
광-CVD와 ECR-CVD를 이용한 비정질 실리콘 박막 트랜지스터의 제작 및 특성 평가 = Fabrication and characterization of amorphous silicon thin film transistor using photo-CVD and ECR-CVD method
서명 / 저자 광-CVD와 ECR-CVD를 이용한 비정질 실리콘 박막 트랜지스터의 제작 및 특성 평가 = Fabrication and characterization of amorphous silicon thin film transistor using photo-CVD and ECR-CVD method / 강태웅.
저자명 강태웅 ; Kang, Tae-Woong
발행사항 [대전 : 한국과학기술원, 1996].
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소장정보

등록번호

8006220

소장위치/청구기호

학술문화관(문화관) 보존서고

MEE 96005

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초록정보

It is characterized and discussed about hydrogenated amorphous silicon thin film transistors (a-Si:H TFTs) fabricated by photo-CVD method. Amorphous silicon TFTs which are used to drive the flat panel displays have been studied heavily and great improvement has been achived, but there were still remained some issues such as low mobility and stability problems. Flat panel Displays drived by a-Si TFTs fabricated by PECVD method has been commercialized. But PECVD method has fundamental problem. That is, there are defects in thin films induced by plasma. To eliminate this problem, it is proposed and characterized about a-Si TFTs fabricated by photo-CVD method. The structure of devices is Top-Gate, and subthreshold slope of it is 0.2 V/dec, switching ratio ($I_{on}/I_{off}$)is $10^5$, and threshold voltage is 1.5 V.

서지기타정보

서지기타정보
청구기호 {MEE 96005
형태사항 52 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Tae-Woong Kang
지도교수의 한글표기 : 임굉수
지도교수의 영문표기 : Koeng-Su Lim
학위논문 학위논문(석사) - 한국과학기술원 : 전기및전자공학과,
서지주기 참고문헌 : p. 48-52
주제 비정질 실리콘 박막 트랜지스터
광화학기상증착법
전자공명화학기상증착법
A-Si TFT
Photo-CVD
ECR-CVD
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