This paper presents a new on-chip voltage generator/regulator in DRAM with low current consumption. In general, to accomplish a temperature compensation it is necessary to adopt an additional process for the depletion MOS because almost every method obtains the reference voltage from the threshold voltage difference between the enhancement and depletion mode MOSFET. In this paper, a new temperature compensation method is proposed using the concept of so-called 'active bias'. Only using the enhancement mode MOSFET, considerably good performance can be obtained. The total current is less than 5μA at external voltage ranging from 2.5 to 4V and at temperature ranging from 25 to 100℃ the temperature coefficient is about 0.33mV/℃. In addition, dynamic operation method will be introduced, and to implement this approach, a new low-duty-ratio-clock generator will be proposed. Consequently, these methods can be applied to any process and it consumes very low current. So our circuit has an attractive features for the battery-operated high density DRAM's or any other chips.
