As the need for reducing size of semiconductor chips increases, the use of plasmas for manufacturing semiconductor devices becomes more desirable. Thus the design and control of plasma generating chamber is essential for the best fit to our need. Though numerical simulation method is still in its early stage, its importance cannot be underestimated.
In this article, volume averaged densities and electron temperature of $SF_6$ gas discharge are studied and the possibility of electron temperature control is tested, in which a negatively biased mesh grid is centered inside the reactive chamber. While the left room has its power source, the right room is supplied only by an energy influx from the electrons passing through the mesh grid whose voltage is manipulated. We observe the electron temperature change of the right room as the grid voltage becomes more negative.