In order to prepare AlN thin films, hydrizoalanes $[Me_2AlNHNMe_2]_2$ (1) and $[Et_2AlNHNMe_2]_2$ (2) were synthesized and utilized as single-source precursors in organometallic chemical vapor deposition (OMCVD) process. The hydrizoalanes, 1 and 2, were characterized by NMR, IR and Mass spectroscopic methods. Molecular structure of trans-1 has been determined by a single-crystal X-ray diffraction study. $^1H$ NMR spectrum of 1 reveals that the dimeric complex 1 undergoes a cis-trans isomerization in solution. Resonances due to trans-1 and cis-1 in toluene-$d_8$ coalesce at -77℃ and $\Delta G_c^{\ddagger}$ for the isomerization process is 9.34 kcal/mol. Upon thermolysis of 1 and 2, new complexes $(Me_2AlNNMe_2)_2(MeAlNHNMe_2)_2$ (3) and $(Et_2AlNNMe_2)_2(EtAlNHNMe_2)_2$ (4) were produced, respectively. Complexes 3 and 4 are supposed to be intermediates to AlN thin films.
Preparation of AlN thin films on the Si(100) and Si(111) single crystal surfaces has been examined by using precursors 1 and 2 at temperatures between 300℃ and 700℃ at a pressure of ca. $10^{-3}$ torr. The deposited thin films were characterization by using X-ray photoelectron spectroscopy and scanning electron microscope.
