서지주요정보
플라즈마 화학 증착법으로 제작한 미세 결정 규소 박막의 특성에 관한 연구 = Charaterization of microcrystalline silicon films drepared by plasma enhanced chemical vapor deposition
서명 / 저자 플라즈마 화학 증착법으로 제작한 미세 결정 규소 박막의 특성에 관한 연구 = Charaterization of microcrystalline silicon films drepared by plasma enhanced chemical vapor deposition / 최광열.
저자명 최광열 ; Choi, Kwang-Yeol
발행사항 [대전 : 한국과학기술원, 1996].
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8006625

소장위치/청구기호

학술문화관(문화관) 보존서고

DPH 96007

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초록정보

The electrical, optical, and structural properties of microcrystalline silicon (μc-Si) films prepared by rf plasma-enhanced chemical vapor deposition using $SiF_4$ and $H_2$ gases have been investigated. We have deposited μc-Si films with varying deposition conditions such as substrate temperature and hydrogen dilution ratios. In the ranges of $300~400^oC $ substrate temperature, the structural properties of μc-Si films don't change and the deposition rate of the films decreases as the substrate temperature increased by effective etching of week bonded adsorbates. As the hydrogen dilution ratio of source gases increases, the film structure changes from amorphous to microcrystalline. The crystalline volume fraction of μc-Si films also increases with increasing the hydrogen dilution ratio and reaches about 80 % at the hydrogen dilution ratio above 0.2. With more increasing the hydrogen dilution ratio we don't observe the structural changes of μc-Si films, but increase of the hydrogen content in the film was observed. To investigate the growth mechanism of the μc-Si films, we have deposited the μc-Si films on two different types of substrates : Corning 7059 glass and $SiO_2$ film. We observed that on the glass substrates, small grain grew and grain boundaries were not clear at the early stage of deposition (≤ 100 nm) before the growth of a columnar crystalline layer. However, on the $SiO_2$ substrates, after the growth of a thin amorphous layer (~10 nm), direct growth of a columnar crystalline layer was observed. Surface roughness of the films increased with the film thickness on the both substrates and was larger on glass substrates than on $SiO_2$ substrates. We have also studied the electrical properties of μc-Si films prepared with various deposition conditions. Dark conductivities of the μc-Si films are as large as $~10^{-3}$ S/cm and activation energies of the films are as small as ~0.2 eV. Electrical conduction of undoped μc-Si films is explained by the combination of the extended conduction at high temperatures and the variable range hopping at low temperatures. Hydrogen plasma treatment to the films affect the electrical conduction of μc-Si. After hydrogen treatment, activation energies of μc-Si become larger than those of as-deposited films and one electrical conduction path in μc-Si are shown. To explain the electrical conduction of μc-Si before and after hydrogen plasma treatment, we propose a band diagram of μc-Si such that the Fermi level located at 0.15 eV below the conduction band due to the donor-like defects.

서지기타정보

서지기타정보
청구기호 {DPH 96007
형태사항 xi, 103 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Kwang-Yeol Choi
지도교수의 한글표기 : 신성철
공동교수의 한글표기 : 이주천
지도교수의 영문표기 : Sung-Chul Shin
공동교수의 영문표기 : Choo-Chon Lee
수록잡지명 : "Substrate-dependent growth of polycrystalline silicon films prepared by plasma-enhanced chemical vapor deposition using SiF4 and H2 gases". Japanese Journal of Applied Physics, vol. 34, no. 9, pp. 4673-4676
학위논문 학위논문(박사) - 한국과학기술원 : 물리학과,
서지주기 참고문헌 : p. 98-103
주제 미세결정 규소
플라즈마 화학증착법
microcrystalline silicon
PECVD
XRD
silicon tetrafluoride
TEM
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