서지주요정보
근적외선 AlGaAs 표면광 마이크로 레이저의 제작과 발진 특성 = Fabrication and lasing characteristics of AlGaAs deep-red vertical-cavity surface-emitting lasers
서명 / 저자 근적외선 AlGaAs 표면광 마이크로 레이저의 제작과 발진 특성 = Fabrication and lasing characteristics of AlGaAs deep-red vertical-cavity surface-emitting lasers / 유지영.
저자명 유지영 ; Yoo, Ji-Young
발행사항 [대전 : 한국과학기술원, 1995].
Online Access 원문보기 원문인쇄

소장정보

등록번호

8005871

소장위치/청구기호

학술문화관(문화관) 보존서고

DPH 95021

휴대폰 전송

도서상태

이용가능

대출가능

반납예정일

초록정보

Deep-red vertical-cavity surface-emitting lasers(VCSELs) with superlattice active region have been designed and fabricated using AlGaAs system. By studying electrical behaviors as a function of temperature from 80K to 310K, barrier heights and optimum cavity design parameters are obtained. The barrier height for holes between Al0.65Ga0.35As-Al0.3Ga0.7As and AlAs-Al0.65Ga0.35As(Δx = 0.35) is measured to be 77 meV at zero bias for a 780 nm VCSEL. The contribution of electrons to electrical resistance is estimated to be negligibly small compared to that of holes for the structure consisting of Δx = 0.35. For n-mirrors, if one avoids using AlGaAs layers with x< 0.3, one could eliminate the n-mirror resistance to a negligible level even without using intermediate steps or grading between quarter-wave layers of AlGaAs. For 750 nm VCSELs, cw lasing is observed at low temperatures ranging from 80K to 140K. The threshold current has a broad minimum near 100K. The maximum output power of a VCSEL with a 20 ㎛ square window is ~1.6 mW at 80K. At room temperature, gain peak and Fabry-Perot resonance are estimated to be offset by ~40 nm. The VCSELs designed to lase around 780 nm are lasing around 770 nm at room temperature. But the minimum threshold current and maximum differential quantum efficiency are observed at 200K, which indicate slight mismatch between gain peak and Fabry-Perot resonance at room temperature. For optimum cw performance at room temperature, it is necessary to match the gain peak and the Fabry-Perot resonance and consider the effects of thermal red-shift of 4~5 nm due to ohmic heating above lasing. Precision etch-depth control is realized using a chemically assisted ion-beam etching system equiped with in situ laser reflectometry. Counting the number of interference fringes, we achieve a controllability of etch-depth within an error range of a quarter-wave thickness. Spatial uniformity of etched depth is about 5% over 1 ㎠ area, which corresponds to one pair over 20 pairs of quarter-wave stacks of AlGaAs/GaAs distributed Bragg reflectors. For future optical switching and optical computing applications, monolithic NOR and INVERTER active optical logic device arrays are characterized.

서지기타정보

서지기타정보
청구기호 {DPH 95021
형태사항 iv, 93 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Ji-Young Yoo
지도교수의 한글표기 : 이용희
지도교수의 영문표기 : Yong-Hee Lee
학위논문 학위논문(박사) - 한국과학기술원 : 물리학과,
서지주기 참고문헌 : p. 86-93
주제 표면광 마이크로 레이저
논리소자
건식식각
VCSEL
monolithic logic device
CAIBE
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