A lamp-heated LPCVD system is designed and implemented for the deposition of poly-Si, silicon nitrite, and silicon dioxide. The temperature of a water can be varied from 500℃ to 1100℃, and is settled within 10 seconds with PID control algorithm. Several films can be deposited without removal of the wafer from the vacuum chamber by changing the temperature and the flowing gas.
Varying the temperature, pressure, and silane flow rate, poly-Si is deposited in order to test the system. Results show small growth rate and low activation energy, 2.5 Kcal/mole. The sheet resistance of the poly-Si doped with phosphorus measures from 50Ω/square to 4.5kΩ/square.
