서지주요정보
펄스화학기상침투법에 의한 탄소/탄소 복합재료의 치밀화에 관한 연구 = Densification of carbon/carbon composite by pulse chemical vapour infiltration
서명 / 저자 펄스화학기상침투법에 의한 탄소/탄소 복합재료의 치밀화에 관한 연구 = Densification of carbon/carbon composite by pulse chemical vapour infiltration / 정혁제.
발행사항 [대전 : 한국과학기술원, 1995].
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소장정보

등록번호

8005764

소장위치/청구기호

학술문화관(문화관) 보존서고

MEM 95016

휴대폰 전송

도서상태

이용가능(대출불가)

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반납예정일

리뷰정보

초록정보

Carbon/carbon composites were fabricated by pulse chemical vapor infiltration (Pulse CVI) in which cycles of evacuation of the vessel and introduction of the source gas were repeated sequentially. A propane gas was used as a source gas and a nitrogen gas was used as a carrier gas. The effects of deposition temperature (900, 1100 ℃), reactant gas concentration (20, 100 %), gas flow rate (600, 1800 SCCM), gas introducing time (2, 10 $\sec$), evacuation time (10, 30 $\sec$) and pulse number (1000, 5000) on the degree of densification of phenol-based carbon/carbon preform were studied adopting experimental design method. According to the analysis of variance (ANOVA) of the experimental data, the important parameters were deposition temperature, gas introducing time and pulse number. An optimum processing parameters on pulse CVI for densification under given conditions were found to be 900℃ of deposition temperature, 100 % of reactant gas concentration, 1800 SCCM of flow rate, 10 sec of gas introducing time, 30 sec of evacuation time and 5000 of pulse number. Each parameter was varied with the other parameters being constant. Deposition rate increased with increasing deposition temperature at low deposition temperature region, but decreased with increasing deposition temperature at high deposition temperature region. Weight gain increased with increasing gas concentration. Gas flow rate did not affect the bulk density so much. Bulk density increased with increasing gas introducing time. When the ratio of evacuation time to gas introducing time was 4, weight gain was maximum. Bulk density increased with increasing pulse number. The deposition temperature at which deposition rate was maximum was changed when gas introducing time was changed. When gas introducing time became longer, the deposition temperature became lower. The optimum deposition condition is thought to be 850℃ of deposition temperature, 100% of reactant gas concentration, 3600 SCCM of gas flow rate, 5 sec of gas introducing time, 20 sec of evacuation time and 10,000 of pulse number.

서지기타정보

서지기타정보
청구기호 {MEM 95016
형태사항 iv, 67 p. : 삽화 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Hyeok-Je Jeong
지도교수의 한글표기 : 박종옥
지도교수의 영문표기 : Jong-Ook Park
학위논문 학위논문(석사) - 한국과학기술원 : 전자재료공학과,
서지주기 참고문헌 : p. 59-67
주제 Composite materials.
Seepage.
복합 재료. --과학기술용어시소러스
치밀화. --과학기술용어시소러스
밀도. --과학기술용어시소러스
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