The Pt thin films on MgO buffer layer were deposited by RF mgnetron sputtering method in order to make use of bottom electrode for highly oriented perovskite ferroelectric film to the c-axis. The MgO buffer layer was introduced to grow the Pt films with (100) orientation preferentially.
The effects of deposition temperature of the Pt thin films and microstructure and crystalline quality of the MgO thin films to the (100) preferred orientation of the Pt films were investigated. Rocking curve full withs at half maximum(FWHM) were measured by XRD on the MgO(200) reflection to characterize the tilt misalignment of the MgO grains.
The MgO films deposited on Si(100) wafer were grown with preferred (100) orientation and MgO film deposited at 425℃ showed high crystalline quality with refractive index of 1.725 at 6728Å which was close to that of MgO bulk crystalline. The MgO(200) peak intensity was increased significantly after RTA treatment in oxygen environment, but crystalline quality of MgO films was not enhanced by RTA treatment.
The (100) orientation of the Pt thin film growth on MgO buffer layer displayed a strong sensitivity to the thickness of the MgO films as crystalline quality and surface roughness of the MgO films were varied with film thickness. Low growth rate and high deposition temperature of the Pt film were required to grow Pt films with (100) orientation preferentially.