Undoped and phosphorus oped microcrystalline and epitaxial silicon films have been prepared by mercury-sensitized photochemical vapor deposition(Photo-CVD) method using $SiH_4$ and $H_2$ gas mixtures at low temperature of 250℃.
Maximum conductivity of 22 S/cm and optical band gap of 2.4 eV were achieved for n type microcrystalline silicon. Reflection high energy electron diffraction (RHEED) patterns and Raman spectroscopy measurements showed that single crystal silicon films were successfully grown by using $SiH_4$ and $H_2$ for the first time.
It was found from the experiments that not only $H_2$ dillution ratio but deposition rate play important roles in the formation of microcrystalline Si and epitaxial Si films.
