In this thesis, we deal with the design of Si MMIC Library using 0.8 μm BiCMOS technology and the implementation of double conversion tuner. In the library design part, we propose various structures which can have potentially good performance in microwave frequency. The patterns in the library are divided into three categories which are active devices, passive devices, and transmission lines. Active devices include bipolar junction transistors, MOS transistors, and dual gate MOS transistors. Each active devices are designed to have high cut-off frequency and low noise figure. Passive devices consist of resistors, inductors, and capacitors. Specifically, we propose inductor structures composed of 4 μm thick Al metalization on very thick polyimide to obtain large resonant frequency and large Q. We also implemented a double conversion tuner circuit using hybrid technique. Overally, it shows 30 dB gain (Typ), 4 dB noise figure (Typ), and 15 dBm third order intercept point (Typ). Finally, nonlinear analysis is extensively performed for optimum tuner system architecture and it is found that three band system is the most appropriate one.
