In this thesis the photoluminescence of polycrystaline $Zn_{1-X}Cd_XGa_2Se_4$, and singlecrystaline $ZnGa_2Se_4$, $ZnGa_2Se_4:Co^{2+}$ and $CdGa_2Se_4$ were studied. $Zn_{1-X}Cd_XGa_2Se_4$ were prepared by the melt growth method, and $ZnGa_2Se_4, ZnGa_2Se_4:Co^{2+}$ and $CdGa_2Se_4$ by iodine transport method. A simple model of defect levels is suggested to identify the photoluminescence spectrum. At low temperature, photoluminescence is due to the transition between deep donor and accepter states originated from mutual substitution of cations. On the other hand deep center of chalcogen vacancy dominates the photoluminescence spectrum at room temperature.
