In this thesis, TCP etching reactor was fabricated and was discharged with RF wave source. To transfer the RF power to the plasma, TCP antennas, which were made into circular and spiral types with copper material coated silver, were used. With the double Langmuir probe and the emissive probe TCP plasma was characterized and compared.
In the dry etching processes, the wafer on the substrate should be located in the plasma. Therefore, the geometry of chamber is changed and the spatial distribution of the plasma would was distorted. The geometrical effects on the plasma were measured and analyzed.
