Poly(butadiene sulfone)(Poly(BdS)) was prepared by radical polymerization of butadiene sulfone(BdS) and its photolytic behavior was studied by ultraviolet and electron-beam irradiation.
In radical copolymerization of butadiene sulfone with AIBN under benzene, butadiene and sulfure dioxide were produced from the thermal decomposition of the butadiene sulfone, followed by copolymerization, of which the chemical structure was confirmed by NMR, IR, Pyrolysis-GC.
In the UV irradiation of poly(butadiene sulfone) film, photooxidation occured by $O_2$ in air rather than photodegradation.
Irradiation with electron-beam of 5kV caused chain scission, its degradation followed to hydrocarbons and $SO_2$. It was regarded that the property could be utilized as positive photoresist.
This polymer decomposed of three steps as determined by TGA and exhibited a glass transition at 12.3℃.
