Aluminium nitride films with basal crystallographic orientation have been grown on single-crystal silicon, $p^+$ doped single crystal silicon and glass at substrate temperature below $150^\circ{C}$. The deposition technique used was rf diode sputtering of an aluminium target in argon/nitrogen gas mixture containing 50 percent nitrogen. The full width half maximum of (0002) was in the range of 3˚∼5˚.
Overmoded and membrane film bulk acoustic resonator (FBAR) using AlN film was fabricated on Si substrate. The new equivalent circuit of FBAR including parasitic effects has been shown to be well consistent with measured data.