CMOS LCD driving circuits using poly-Si TFT were designed and basic circuits including test patterns were fabricated. The driving circuit consists of column driver and row driver. Row driver selects the gate line of TFFs in pixel and column driver transfer the image signal from external driver to the pixels in selected row line. Column driver drives the pixels by block because Poly-Si can not operate at full speed of driver. Row dirver has mode selection circuit which can select a mode between interlacing mode and non-interacing mode. Various parameters were extracted from fabricated NMOS and PMOS devices. Because of the large amount of fixed charge $Q_f$, threshold voltage of devices is shifted toward negative voltage by 4V. Shift register can operate at 1MHz clock frequency with 4pFload. From this result, number of block were determined 32 and block size were determined 20 pixels. With configuration fo 100/10 PMOS and 50/10 NMOS, row driver and column driver can drive long line.
