The Results by Monte Carlo Method are more accurate than those by Drift Diffusion model, because Monte Carlo is very statistical and physical method. This thesis describes several techniques for Monte Carlo Method and shows the results of Simulations on Bulk GaAs and MESFET.
In the Simulation of Bulk GaAs, Drift velocity, Average energy, Valley population are obtained, which are necessary for hybrid self-consistent method. Electron Impact Ionization rate for Avalanche Break Down is also simulated.
In the 2-D Simulation of GaAs MESFET, drain current-voltage curve is simulated and the phenomenon of fast transition is observed in channel velocity due to submicron gate length.