서지주요정보
열처리 조건이 ECR plasma 화학 증착법으로 증착된 tantalum oxide 박막의 물성에 미치는 영향 = The effects of annealing conditions on the properties of tantalum oxide thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition
서명 / 저자 열처리 조건이 ECR plasma 화학 증착법으로 증착된 tantalum oxide 박막의 물성에 미치는 영향 = The effects of annealing conditions on the properties of tantalum oxide thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition / 권오승.
저자명 권오승 ; Kwon, Oh-Seung
발행사항 [대전 : 한국과학기술원, 1993].
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소장정보

등록번호

8003811

소장위치/청구기호

학술문화관(문화관) 보존서고

MEM 93001

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초록정보

Thin tantalum oxide films (17nm) deposited by ECR PECVD were annealed in $N_2$ and $O_2$ atmospheres. In case of annealing in $O_2$ atmosphere $TaO_2$ nonstoichiometric phase appeared above 750℃, δ-$Ta_2O_5$ appeared at 850℃ and above 900℃ only δ phase remained. Above 850℃ interfacial $SiO_2$ formed at the $TaO_x$/Si interface, which caused the increase in apparent thickness by 5.9 nm for 900℃ annealed film when measured by ellipsometer. Electrical property was the best at 750℃ at which the nonstiochiometric $TaO_2$ started to form. Leakage current density at 1MV/cm was reduced from $5.9\times10^{-8}A/cm^2$ (as-deposited) to $2.94\times10^{-9}A/cm^2$ (750℃ annealed), and breakdown field (applied electric field at $10^{-6}A/cm^2$) was increased from 2.22 MV/cm (as-deposited) to 5.87 MV/cm (750℃ annealed). The reduction of leakage current density and the increase of breakdown field were due to $TaO_2$ phase rather than $O_2$ addition to the film, which is contrary to other reports. In case of annealing in $N_2$ atmosphere, no nonstoichiometric phase appeared and the films crystallized at 750℃ to form δ-$Ta_2O_5$. Annealing in $N_2$ atmosphere caused severe degradation of the leakage current characteristics. In both annealings, thickness reductions were in the range of 1.3%∼7.8%.

서지기타정보

서지기타정보
청구기호 {MEM 93001
형태사항 iv, 59 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Oh-Seung Kwon
지도교수의 한글표기 : 천성순
지도교수의 영문표기 : Soung-Soon Chun
학위논문 학위논문(석사) - 한국과학기술원 : 전자재료공학과,
서지주기 참고문헌 : p. 52-56
주제 Annealing of metals.
Plasma-enhanced chemical vapor deposition.
Tantalates.
Breakdown voltage.
열처리 조건. --과학기술용어시소러스
산화탄탈. --과학기술용어시소러스
플라스마 CVD. --과학기술용어시소러스
누설 전류. --과학기술용어시소러스
방전. --과학기술용어시소러스
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