서지주요정보
MOCVD법에 의한 Bi-Sr-Ca-Cu-O계 초전도 박막 제조 및 반응변수에 따른 증착특성 = The fabrication of the Bi-Sr-Ca-Cu-O superconducting thin film by metalorganic chemical vapor deposition and the effect of the reaction parameters on the deposition characteristics
서명 / 저자 MOCVD법에 의한 Bi-Sr-Ca-Cu-O계 초전도 박막 제조 및 반응변수에 따른 증착특성 = The fabrication of the Bi-Sr-Ca-Cu-O superconducting thin film by metalorganic chemical vapor deposition and the effect of the reaction parameters on the deposition characteristics / 신우섭.
발행사항 [대전 : 한국과학기술원, 1993].
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8003780

소장위치/청구기호

학술문화관(문화관) 보존서고

MCM 93005

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초록정보

Bi-Sr-Ca-Cu-O superconducting thin films perpared on the MgO (100) single crystal by metal organic chemical vapor deposition. As a precursor, $Bi(ph)_3$ [or $Bi(dpm)_3$], $Sr(dpm)_2$, $Ca(dpm)_2$, and $Cu(dpm)_2$ were used. In this study, the effect of deposition temperature, oxygen flow rate( oxygen partial pressure ) and cooling rate on the formation of the Bi-Sr-Ca-Cu-O superconducting phase and microstructure were investigated. We could abtain high quality thin films when triphenylbismuth [$Bi(ph)_3$] was used as Bi source compared with dipivaloylmetanato-bismuth [$Bi(dpm)_3$]. Because triphenylbismuth is more stable vapor pressure at bubbling temperature and easier composition control of film. The vapor pressure of the metalorganic sources were strongly dependent on the bubbling temperature, and the optimal bubbling temperature of each source material was $Bi(ph)_3=120\circ\C$, $Sr(dpm)_2=240\circ\C$, $Ca(dpm)_2=202\circ\C$ and $Cu(dpm)_2 = 120℃. Deposition temperature was great effective parameter on superconducting phase formation and microstructure, and the deposition temperature of low $T_c$ phase decreased with decreasing the oxygen partial pressure. Also, cooling rate was important variable on superconducting phase formation and microstructure. From this result, we know that superconducting phase is transformed during the cooling after formation of each oxide or its compound at deposition time, though some part of each evaporated source directly formed superconducting phase in the reactor. Best result up to date, abtained from a film grown at 820℃ and 1℃/min cooling rate, show 76K $T_{c(zero)}$ and 4000 A/㎠ critical current density.

서지기타정보

서지기타정보
청구기호 {MCM 93005
형태사항 [iii], 66 p. : 삽화 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Woo-Sup Shin
지도교수의 한글표기 : 김호기
지도교수의 영문표기 : Ho-Gi Kim
학위논문 학위논문(석사) - 한국과학기술원 : 무기재료공학과,
서지주기 참고문헌 : p. 64-66
주제 Superconductors.
Thin films.
Microstructure.
초전도. --과학기술용어시소러스
박막 성장. --과학기술용어시소러스
미세 구조. --과학기술용어시소러스
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