Strontium titanate($SrTiO_3$) thin films on silicon wafers were prepared by RF magnetron sputtering technique. The relationships between deposition rates and various process parameters such as deposition temperatures, gas composition, sputtering pressure, and RF power were studied. X-ray diffractometer, infra-red spectroscopy, X-ray photoelectron spectroscopy(XPS), and scanning electron microscope(SEM) were used to characterize the film crystal structure, the film composition, and microstructures. The films deposited below 200℃ did not appear X-ray peak of $SrTiO_3$ and observed broaden band spectrum of Ti-O stretching vibration in IR analysis. The films deposited above 300℃ appeared X-ray peak of $SrTiO_3$ and the band spectrum of Ti-O stretching vibration. The surface of strontium titanate film deposited at low deposition temperature showed smooth amorphous state and deposited at high deposition temperature showed grains which size increased with increasing deposition temperature. There was no variation of microstructures with change of working pressure. The deposition rates of the films were decreased with increasing deposition temperatures and were abruptly decreased with adding the oxygen to argon gas. The deposition rates of the films were linearly increased with increasing RF power and were decreased with increasing the distance between the target and the substrate.
