The polycrystalline silicon films were fabricated by high temperature RTA(rapid thermal annealing) using PECVD(plasma enhanced chemical vapor deposition) deposited amorphous films with no damage to glass substrate. And the effect of the deposition temperature of films and annealing temperature on the properties of recrystallized polycrystalline films have been investigated with varying temperature and time. Experimental results and X-ray results show that amorphous silicon thin film can be recrystallized by 80 second annealing at 860℃. and 600℃-deposited film shows much shorter characterictic time for recrystallization than other films deposited at lower temperature. But 500℃-deposited film has larger grain size, so much better for RTA. And longer time annealing decrease electrical conductivity with the grains collapsing.
