The GaAs and $Al_xGa_{1-x}As$ layers were grown by MOCVD were characterized by Hall measurement and PL measurement. By analyses, the doping concentration and the Al composition could be controlled as desired. To improve the quality of $Al_xGa_{1-x}As$, the growth temperature was raised from 650℃ to 700℃. The improvement could be confirmed from the PL measurement.
The strip geometry AlGaAs/GaAs double heterostructure laser diode was fabricated. The thickness of active layer was 0.1㎛ and the stripe widths were 5㎛ and 30㎛ . The characteristics of a laser diode was measured. The threshold current density was 5~40kA/㎠ and the internal quantum efficiency was $\eta_i\sim18 %$. To improve the performance, the quality of the epitaxial layer and the ohmic contact should be studied.
