A 16×1 infrared line sensor has been designed and fabricated with PtSi Schottky diode. A 16 bit nMOS metal gate 2-phase dynamic shift register is used to read the signal of each pixel sequentially. Proper operation of the 16 bit shift register and sensor has been confirmed by SPICE simulation. The double layer liftoff technique is used to protect the gate oxide during Pt sputtering.
The fabricated device showed no damage in the gate oxide during Pt sputtering. The 16 bit shift register and sensor operated successfully. The Schottky diode has shown infrared response when illuminated by a 250W tungsten infrared lamp.