An optoelectronic integrated circuits (OEIC) transmitter which consists of the roof top reflector laser diode (RTR LD) with integrable mirror structure and power MESFET was monolithically integrated by selective LPE and selective MOCVD technology. The selective MOCVD technology proved to be appropriate for integration of photonic device and electronic circuits. The OEIC transmitter which was fabricated by selective MOCVD technique showed 5% modulation depth for $V_g=9V$ and $V_{bias}=8V$ with sinusoidal signal.