The microstructures and phases of the deposits obtained by chemical vapor deosition of CH SiCl were investigated in order to control the deposition parameters for the preparation of SiC.
The deposition parameters such as deposition temperature, total flow rate, and H/CH SiCl ratio were varied. The substrates used were pyrolytic carbon and silicon wafer.
On pyrolytic carbon substrates, silicon is tend to deposite simultaneously with SiC as the temperature and H/CH SiCl ratio decrease. The deposits showed rod-shaped morphology at high temperatures, which was observed to consist of core and sheath by etching, whereas particleshaped morphology was dominant at lower temperatures.
On silicon wafers, silicon was co-deposited with SiC at the condition where SiC single-phase was obtained on pyrolytic carbon. The morphology of deposits showed no particular features.
The deposition phases obtained in these work were compared with those based on thermodynamic calculations. The dffects of two different substrates on the microstructures and phases of deposits were discussed in view of the roughness and chemical character of the substrates.
