A 16x1 IR line sensor has been designed with PtSi/p-Si Schottky diode. A 16 bit nMOS metal gate 2-phase dynamic shift register is used to read the signal of each pixel sequentially. Proper operation of the device has been confirmed by circuit simulation. Current sources with varying magnitude have been used in the simulation to represent the photo-currents. In fabrication result, sputtering damage produces unacceptably large variation of the threshold voltage of MOS transistors. A significant finding of the simulation is that the maximum signal the device can handle increases by reducing the body effect of nMOS transistors.
