Boron and Phosphrous doped microcrystalline silicons are fabricated by RF glow discharge method. The crystalization strongly depends on the substrate temperature and no crystalization appears between substrate temperature $275^\circ{C}-309^\circ{C}$. This is due to excess hydrogen escape from the film.
Microcrystal films show high electrical conductivity and small activation energy because of large doping efficiency, increased drift mobility and decreased localized density of state. The optical gap of Boron doped p-layer is sutable for the window material of solar cells.
