The PIN type a-SiC:H/a-Si:H heterojunction solar cells were fabricated on the $SnO_2$ and ITO transparent conducting oxide by R.F.glow discharge technique in order to study the effects of $CH_4/SiH_4$ ratio and the substrate temperature on the solar cell performance.
The optimum condition of the $CH_4/SiH_4$ ratio was about 5 and the optimum substrate temperature was 220℃.
The obtained maximum efficiency was 8.16 % for $SnO_2$ substrate solar cell and 6.48 % for ITO substrate solar cell.
The ITO substrate solar cells were inferior to the $SnO_2$ substrate solar cells due to the indium diffusion into p and i layer in the ITO substrate solar cell.