The system of RTA(Rapid Thermal Annealing) for III-V ohmic contacts was designed and implemented.
Heating rate of RTA system is 50℃/sec. Ohmic contacts were made by RTA on n-type GaAs wafer on which Au-Ge/Ni (1000Å/800Å) film is evaporated. Metal sheet resistance is reduced by plating Au with the thickness of 2-3㎛.
TLM(Transmission Line Model) measurement method for reactanqular test patterns was imployed to determine the specific contact resistance.
Specific contact resistance was evaluated according to the change of alloy temperature and time so that the minimum specific contact resistance of $5.5×10^{-6}Ω-㎠$ was obtained.