The photoluminescence fatigue by light soaking and its recovery by annealing at various temperatures were investigated for undoped, phorous- and boron-doped hydrogenated amorphous silicon. It was found that photoluminescence change due to light soaking at 15 K was not recovered by 200 K annealing but further reduced. This negative recovery at 200 K annealing and positive recovery at 100 K annealing were interpreted in terms of surface band bending.