Dobule hetrostructure GaAs/AlGaAs wafer have been grown by MOCVD method and broad contact laser diode have been fabricated. Electrical and optical properties of this laser are characterized. The threshold current is 2.2 Amp and lasing wavelength is 8761Å (at 2.6 Amp). As the injection current is increased, the lasing wavelength is shifted to shorter wavelength.
And various subproblems for DH lasers such as injected current spreading, lateral mode distribution, carrier and gain profiles, and the dependence of threshold current on laser parameters are investigated for different composite sheet resistances by using simple continuity equation and Hermite-Gaussian intensity distribution.
As the current is increased above threshold current the spatial hole burning appears on gain distribution. And even in ideal symmetrical structures, spatial hole burning and turn on of the 1st and 2nd lateral mode give nonlinear characteristics on optical output power-kink effect.
