In this thesis, projection lithography system was fabricated. The objective lens of the system has a numerical aperture (N.A.) of 0.25 × 10. The illumination wavelength is 0.44 um. The resolution and depth of focus of the system are 1.1 um and ± 3.5 um, respectively.
The patterns with 1,2,3 um line width were generated on Si substrate with AZ1350J positive photoresist, and the relation between resolution and field size was measured.