서지주요정보
온도변화가 GaAs-GaAlAs 반도체 레이저의 출력 스펙트럼에 미치는 영향 = Temperature effect on output power spectrum of GaAs-GaAlAs diode laser
서명 / 저자 온도변화가 GaAs-GaAlAs 반도체 레이저의 출력 스펙트럼에 미치는 영향 = Temperature effect on output power spectrum of GaAs-GaAlAs diode laser / 오광룡.
저자명 오광룡 ; Oh, Kwang-Lyong
발행사항 [서울 : 한국과학기술원, 1985].
Online Access 원문보기 원문인쇄

소장정보

등록번호

4103347

소장위치/청구기호

학술문화관(문화관) 보존서고

MAP 8520

SMS전송

도서상태

이용가능

대출가능

반납예정일

초록정보

The effect of the temperature for cw DH(Double Heterojunction) GaAs/GaAlAs diode laser is investigated by measuring the spectral output in a spectrometer and the total output power in a power-meter. The dependence of temperature on the threshold current is described by $J_th=J_0exp(T/θ_0)$,$(θ_0=288.3 k)$ and experimentally confirmed. As the temperature increases from -5℃ to 45℃, the threshold current increases almost linearly from 77 mA to 85.2 mA. The spectral output is analyzed by using Czerny Turner spectrometer. Above the threshold current, the wavelength of the mode of maximum power does not shift through the injection current increases. But the wavelength of the mode of maximum power does increase linearly in accordance with the experimentally obtained equation Δλ/ΔT=2.7A/℃. Below the threshold current, the net gain coefficient is obtained by the measurement of the ratio of the maximum to minimum of the Fabry-Perot resonance of the spontaneous emission. As the injection current increases, the net gain coefficient increases and the gain profile becomes more broad. As the temperature increases, the net gain coefficient decreases and the gain profile moves to long wavelength.

서지기타정보

서지기타정보
청구기호 {MAP 8520
형태사항 iv, 75 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Kwang-Lyong Oh
지도교수의 한글표기 : 이상수
지도교수의 영문표기 : Sang-Soo Lee
학위논문 학위논문(석사) - 한국과학기술원 : 물리학과,
서지주기 참고문헌 : p. 72-73
주제 Semiconductor lasers.
Silicon diode --Effect of temperature on.
비소화갈륨. --과학기술용어시소러스
비소화갈륨 알루미늄. --과학기술용어시소러스
반도체 레이저. --과학기술용어시소러스
온도 종속성. --과학기술용어시소러스
Gallium arsenide semiconductors.
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