The PIN type a-SiC:H/a-Si:H heterojunction solar cells were fabricated using the radio frequency glow discharge decomposition of $SiH_4$ mixed with $CH_4 +B_2H_6$ and $PH_3$ for the deposition of the p- and n-layers respectivily. The effects of substrate temperature, p-layer thickness, deposition gas for p-layer and i-layer thickness were investigated. The best conversion efficiency of 0.2cm by 1.0cm single cell was observed to be 6.99% under simulated AM-1 sunlight.
In order to enlarge the size of a-Si:H solar cell, integrated type cells in which five single PIN cells were connected in series were developed.
At the present stage of experiments, the conversion efficiencies of integrated type solar cell are 3.16% and 5.8% under AM-1 and fluorescent light(120Lux) respectivily.