A GaAs Surface Emitting LED was fabricated on the LPE grown double heterostructure (DH) GaAs wafer.
The front ohmic contact to the p-region was made by a sequential deposition of Cr and Au. Then the wafer thickness was reduced to 150-200 um by lapping with SiC to minimize the IR absorption in n-GaAs bulk region. After the formation of n-type ohmic contact on the backside of wafer, a new double-sided lithography method was used for the definition of n-metal pattern & substate etching pattern.
Measured L-I curve for a pulse train input having 14 ms period with 2 msec width indicates the relation of L = -0.01336 + 0.002186 I (arbitrary unit) in the region of current larger than 95 mA.