In this thesis the fabrication sequences of room temperature pulsed GaAs-AlGaAs DH laser diodes are presented.
$P^+$-GaAs/P-AlGaAs/p-GaAs/N-AlGaAs layers were grown on an $n^+$-GaAs substrate by liquid phase epitaxy.$p^+$-ohmic contact was made on this wafer by Cr sputtering and Au evaporation. Wafer thickness was reduced to ~100 um by carborundum lapping and Au-Ge was evaporated for $n^+$-contact.
Individual chips were mounted and tested applying 1 usec current pulses. Measured L-I curve shows that $J_{th}$ is 6.25 kA/㎠. Further work is needed to lower $J_{th}$.
