The GaAs-MESFET X-band oscillator which is to produce the optimum output power at 10 GHz is fabricated. The design method uses the large signal scattering parameter deduced from the small signal S-parameter.
The realization of oscillator faces the number of problem, that is, FET biasing, microstrip discontinuity, and parasitic oscillation suppression. These problems have been successfully solved here in two fabrication examples using different commercial GaAs MESFET on the alumina substrate.