Steady state photoluminescence (PL) of hydrogenated amorphous silicon (a-Si:H) deposited by dc glow discharge decomposition has been investigated. The dependences of luminescence on the several conditions, such as preparation conditions, sample temperature and excitation intensity, are investigated and discussed. Broad spectrum with a peak 1.3 eV and a full width at half maximum of 0.3 eV was observed.
Some models of luminescence of a-Si:H are examined and the experimental results of other groups are compared with us. It is found that the behavior of 1.3 eV peak luminescence can be explained without significant Stokes shift and Stokes shift cannot play a major role in some phenomena.
