Hydrogenated amorphous silicon Schottky barrier diodes have been prepared by glow discharge decomposition of $SiH_4$ on stainless steel substrate, and vacuum evaporation of Pd.
They show following good diode characteristics ;
1. the diode quality factor n is 1.33,
2. the saturation current density $J_o$, extrapolated from the forward J-V characteristics, is 7×$10^{-10}$ A/㎠,
3. the built in potential $V_o$ is 0.38 volts,
4. the barrier height $\phi_B$ is 0.92 volts.
From the Schottky diode capacitance-voltage C(V) and conductance-voltage G(V) measurement versus frequency, electronic density of states distribution N(E) is determined. The main features of N(E) are the following ;
1. the density of states around Fermi-level $N(E_F)$ is about 2.7×$10^{17} ev^{-1} cm^{-3}$,
2. the density of states near conduction band mobility edge is about 7×$10^{21} ev^{-1} cm^{-3}$,
3. no peak in the density of states in the gap shows up.
