Titanium dioxide thin films were deposited on [100] single crystal silicon wafer by MOCVD in the hot wall and the cold wall reactor. $Ti(OC_3H_7)_4$ is used as $TiO_2$ precusor.
The analysis of the deposited film with XRD patterns and TEM selected area diffraction patterns showed the crystal structures of the thin film. The composition and the bonding states of the deposited films have been investigated by analyzing XPS and AES signal. SEM photographs were used to characterize the morphology of the deposited films as a function of the preparation conditions such as deposition temperature, $Ti(OC_3H_7)_4$ partial pressure, and oxygen content.
The thin films deposited above 500℃ show porous microstructure and X-ray diffraction patterns similar to amorphous state and have grains consisted of 3-4 nm size-microcrystallines. The film deposited at 700℃ has the crystal structure of monoclinic and the composition of $Ti_3O_5$ by analyzing the selected area diffraction pattern of that film. This is accord with the result of Auger spectrum analysis. Oxygen promotes gas phase reaction and surpresses crystallization of the deposited film.