In this thesis, MMIC components such as MESFETs, schottky doides, inductors, capacitors, resistors are designed, fabricated, and measured.
DC and AC characteristics of MESFET's are measured and model parameters used for the small signal equivalent circuit of a MESFET are extracted by two different methods.
Scattering parameters of passive devices are measured with the combination of on-wafer probing system and network analyzer. The small difference of S-parameter values is found the designed and the measured. Probably, process nonuniformities may lead to the slight discrepancy of the values.
The device performance of the fabricated MESFET's and passive devices are guaranteed at least up to 12GHz. So these devices are well applied to building MMIC block. More accurate modelling and stable process conditions are required for reliability and reproducibility.
