In this thesis, it is described that the design, fabrication, and performance of the 1×12 array of planar InGaAs/InP PIN-PDs. The PIN-PD array was designed to use in the 565 Mbps parallel optical-fiber transmission system. For each element of the array, the diameter of photodetective area is 60㎛, the diameter of p-metal pad is 9㎛, and the PD seperation is 250㎛. The device was processed from(100) InP wafer. As an active region, $In_{0.53}Ga_{0.47}$As layer was grown about 3㎛ by LPE. As a window material, the InP layer was grown about 0. 5㎛ by OMVPE to reduce the dark current. The p-n junction was formed by Zn-diffusion through a circular 80㎛-diameter opening in the $SiO_2$ layer. The contacts to the p and n region were made by the evaporation of Cr/Au using the E-beam evaporator. From the I-V measurement for each element of the array, the dark current ($I_d$) is ≤ InA at -5V, the breakdown voltage is about -30V, $V_{cut-in}$ voltage is about 1V, and the series resistance is ≤ 20Ω. From the C-V measurement, the total capacitance is ≤ 1.5pF at -5V. The carrier concentration of the InGaAs layer is $1.2×10^{16}㎝^{-3}$. After the array was packaged using 326Ω chip registor, the measured $f_{-3㏈}$ is about 1㎓. The total AC cross-talk is -26㏈(5% coupling) at 400㎒. From these results, the fabricated PIN-PD array can be used in the 565Mbps parallel optical-fiber transmission system.
