Buffer layer must have good crystality and surface morphology for fabrication of high $T_c$ superconductor films. so we investigated crystality and morphology each buffer layer. YSZ buffer layer deposited by dc reactive sputtering. the optimal condition of YSZ buffer layer is deposition rate 1nm/s, thickness 300nm, partial pressure of water 1mTorr. CeO2 buffer layer deposited by thermal evaporation. CeO2 buffer layer used additionally IBAD to improve in-plane crystality of film. The value of 200V beam voltage was found to have a little effects on crystalline structure of the CeO2. SBCO thin films have been prepared on YSZ substrates which have inclined c-axis. SBCO thin films have been found anistropy of current direction. However, activation energy in the thermally activated flux creep region was not dependent current direction.
완충층은 결정성과 표면이 매우 중요하다. 우리가 사용하는 YSZ의 최적화된 조건을 1nm/s의 증착률과 1mTorr의 물분압, 300nm의 두께에서 얻었다. CeO2는 in-plane결정성을 향상시키기 위하여 IBAD이용했다. 대략 200V에서 결정성의 향상에 영향이 있었다. SBCO박막은 기울어진 YSZ기판위에 증착했다. 전류의 방향에 따른 임계전류의 강한 이방성을 가지지만 thermally activated flux creep영역에서는 활성화에너지의 이방성이 보이지 않는다.
