Fiber Optic was bonded to $Al_{0.3}Ga_{0.7}As-GaAs$ wafer. And then it was lapped and etched from 380um to 2um(1cm*1cm). All process was experienced in the atmospheric environment. Bonding of Fiber $optic/Al_{0.3}Ga_{0.7}As-GaAs$ wafer overcame the limitation of photocathode for $3^{rd}$ Image Intensifier Tube. And it was combination of each advantage of $2^{nd}$ photocathode and $3^{rd}$ photocathode.
Bonding between fiber optic and $Al_{0.3}Ga_{0.7}As-GaAs$ wafer was achieved to more than 5.7 [MPa] surface bonding energy only in inital contact process. It means that this process don't need annealing process, so it is time-saving and low - cost process.
The IIT adapted to this photocathode will have price competition.
Most of all, I accomplished the combination of advantages on each generation photocathode, and I arranged the fabrication process of photocathode. It signifies localization of IIT device and further more, The product has price competition in the market of night-vision goggle.
