서지주요정보
전해도금을 이용한 미세 피치 Au bump 제조 방법 및 접합에 관한 연구 = Fabrication and bonding of fine pitch Au bump by electroplating
서명 / 저자 전해도금을 이용한 미세 피치 Au bump 제조 방법 및 접합에 관한 연구 = Fabrication and bonding of fine pitch Au bump by electroplating / 최준식.
저자명 최준식 ; Choi, Joon-Sik
발행사항 [대전 : 한국과학기술원, 2004].
Online Access 원문보기 원문인쇄

소장정보

등록번호

8015091

소장위치/청구기호

학술문화관(문화관) 보존서고

MAME 04031

휴대폰 전송

도서상태

이용가능

대출가능

반납예정일

리뷰정보

초록정보

As communication information networks expand, the mobile information terminal device market is growing rapidly. greater demands are being placed on the production of low power, low weight and compact packaging technologies for Large Scale Integrated circuits. 3D-Technology promises higher integration density and lower interconnection complexity and delay. As Z-plane technology results in a much lower overall interconnection length, parasitic capacitance and thereby system power consumption can be reduced by as much as 30%. One of the important issues for 3D-packaging is development of bumping technologies which meet ultra fine pitch and low cost. This study covered the fabrication method of fine pitch Au bump and Cu/Sn bump by electroplating and interconnection of 3D-packaging. Electroplating is one of the most popular and feasible methods for ultra fine pitch Au or Cu/Sn bump. Electroplating is affected by many parameters including Substrate, Current density, Plating solution, Temperature, Speed of stirring and electroplating process in detail. Convenient and compatible fabrication condition of Au Bump by Electroplating method was introduced. moreover, fabrication condition of Cu/Sn bump was suggested. Au bump and Cu/Sn bump made by electroplating were compared with in micro bump shear test and pull test conducted as a reliability test. Au bump was more uniformly formed on Ni seed layer than Cu/Ni seed layer and had no crack in the micro bump shear test contrary to Cu/Sn bump. but, Shear strength of Cu/Sn Bump was superior. The analysis of X-ray diffraction to investigate the cause of porous Au bump was conducted. the preferred orientation was revealed as one of reason. Au bumps on thick Ni seed layer were bonded on Au plate with changing bonding pressure to inquire into the appropriate condition of bonding. The optimized bonding condition is that bonding pressure and temperature are about 10,000kgf/㎠ and 350℃ respectively. The higher bonding pressure was gotten, the higher tensile strength was recorded until the specific point and then this gradient fell because of deformation of bump.

서지기타정보

서지기타정보
청구기호 {MAME 04031
형태사항 viii, 76 p. : 삽도 ; 26 cm
언어 한국어
일반주기 저자명의 영문표기 : Joon-Sik Choi
지도교수의 한글표기 : 유진
지도교수의 영문표기 : Jin Yu
학과명칭변경 : 재료공학과가 신소재공학과로 변경됨
학위논문 학위논문(석사) - 한국과학기술원 : 신소재공학과,
서지주기 참고문헌 : p. 74-76
주제 골드 범프
패키징
3차원 패키징
본딩
파인피치범프
AU BUMP
PACKAGING
3D PACKAGING
BONDING
FINE PITCH BUMP
QR CODE qr code